Shock-induced amorphization in silicon carbide

Irradiation-induced defect clustering and amorphization in silicon carbide

Previous computer simulations of multiple 10 keV Si cascades in 3C–SiC demonstrated that many damage-state properties exhibit relatively smooth, but noticeably different, dose dependencies. A more recent analysis of these damage-state properties, which includes additional data at low and intermediate doses, reveals more complex relationships between system energy, swelling, energy per defect, r...

Grain boundary resistance to amorphization of nanocrystalline silicon carbide

Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force...

Shock-wave strength properties of boron carbide and silicon carbide

Depressurization amorphization of single-crystal boron carbide.

We report depressurization amorphization of single-crystal boron carbide (B4C) investigated by in situ high-pressure Raman spectroscopy. It was found that localized amorphization of B4C takes place during unloading from high pressures, and nonhydrostatic stresses play a critical role in the high-pressure phase transition. First-principles molecular dynamics simulations reveal that the depressur...

Pressure-induced amorphization in the nanoindentation of single crystalline silicon

Large-scale molecular dynamics simulations of nanoindentation on a (100) oriented silicon surface were performed to investigate the mechanical behavior and phase transformation of single crystalline silicon. The direct crystalline-to-amorphous transformation is observed during the nanoindentation with a spherical indenter as long as the applied indentation strain or load is large enough. This a...